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Samsung 990 Pro 4 TB (Pascal + V8 1Tb)

4 TB
Capacity
Samsung Pascal
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

Front
PCB Front
PCB Front
Flash
Flash
SSD Controller
Controller
The Samsung 990 Pro is a solid-state drive in the M.2 2280 form factor, launched in September 2023. It is available in capacities ranging from 2 TB to 4 TB. This page reports specifications for the 4 TB variant. With the rest of the system, the Samsung 990 Pro interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the Pascal (S4LV008) from Samsung, a DRAM cache chip is available. Samsung has installed 236-layer TLC NAND flash on the 990 Pro, the flash chips are made by Samsung. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 442 GB, once it is full, writes complete at 1600 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The 990 Pro is rated for sequential read speeds of up to 7,450 MB/s and 6,900 MB/s write; random IOPS reach up to 1400K for reads and 1550K for writes.
At its launch, the SSD was priced at 349 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 2400 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 4 TB (4000 GB)
Variants: 2 TB 4 TB
Hardware Versions:
Overprovisioning: 370.7 GB / 10.0 %
Production: Active
Released: Sep 2023
Price at Launch: 349 USD
Part Number: MZ-V9P4T0BW
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 2.0
Power Draw: 0.06 W (Idle)
Unknown (Avg)
8.1 W (Max)

Controller

Manufacturer: Samsung
Name:
Pascal (S4LV008)
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Architecture: ARM 32-bit Cortex-R8
Foundry: Samsung FinFET
Process: 8 nm
Flash Channels: 8 @ 2,000 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V8
Part Number: K9DYG18J5B-BCK0 (B-die)
Type: TLC
Technology: 236-layer
Speed: 2400 MT/s
Capacity: 2 chips @ 16 Tbit
Toggle: 5.0
Topology: Charge Trap
Die Size: 89 mm²
(11.5 Gbit/mm²)
Dies per Chip: 16 dies @ 1 Tbit
Planes per Die: 4
Decks per Die: 2
Read Time (tR): 40 µs
Program Time (tProg): 390 µs
Block Erase Time (tBERS): 4.0 ms
Die Read Speed: 1600 MB/s
Die Write Speed: 164 MB/s
Page Size: 16 KB

DRAM Cache

Type: LPDDR4-4266
Name: SAMSUNG K4FBE6D4HM-BGCH
Capacity: 4096 MB
(1x 4096 MB)
Organization: 32Gx32

Performance

Sequential Read: 7,450 MB/s
Sequential Write: 6,900 MB/s
Random Read: 1,400,000 IOPS
Random Write: 1,550,000 IOPS
Endurance: 2400 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 442 GB
(432 GB Dynamic
+ 10 GB Static)
Speed when Cache Exhausted: approx. 1600 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

Could be another penta-core controller just like it's predecessor.

NAND Die:

Samsung lists the die as able to do 184 MB/s with an average of 347 µs tPROG, but it does manage to deliver 164 MB/s.
Also states an average of 1640 MB/s read speeds per each die.

May 1st, 2025 19:27 EEST change timezone

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